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NTR4502PT1G MOSFET P-Channel -30V -1950mA 0.165ohm SOT-23 marking TR fast switch low on-resistance low conduction loss
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -1.95A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.165Ω @-1.95A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0--3V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | Features • Leading Planar Technology for Low Gate Charge / Fast Switching • Low RDS(ON) for Low Conduction Losses • SOT−23 Surface Mount for Small Footprint (3 X 3 mm) • Pb−Free Packages are Available |
| 描述与应用 | •领先的平面技术，低栅极电荷/快速切换 •低RDS（ON） 低传导损耗 •SOT-23表面贴装小尺寸（3×3毫米） •无铅包可用 |
