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NTS2101 MOSFET P-Channel -8V -1.4mA 0.065ohm SOT-323 marking TS low on-resistance 1.8Vlow gate drive
| 最大源漏极电压Vds Drain-Source Voltage | -8V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -1.4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.065Ω @-1A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45V |
| 耗散功率Pd Power Dissipation | 2.9W |
| Description & Applications | Features • Leading Trench Technology for Low RDS(on) Extending Battery Life • −1.8 V Rated for Low Voltage Gate Drive • SC−70 Surface Mount for Small Footprint (2 x 2 mm) • Pb−Free Package is Available |
| 描述与应用 | •领导沟道技术低的RDS（on） 延长电池寿命 •-1.8 V额定低电压栅极驱动 SC-70小尺寸表面贴装（2×2毫米） •无铅包装是可用 |
