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NTS2101 MOSFET P-Channel -8V -1.4mA 0.065ohm SOT-323 marking TS low on-resistance 1.8Vlow gate drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-1.4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.065Ω @-1A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.45V
耗散功率Pd
Power Dissipation		2.9W
Description & ApplicationsFeatures • Leading Trench Technology for Low RDS(on) Extending Battery Life • −1.8 V Rated for Low Voltage Gate Drive • SC−70 Surface Mount for Small Footprint (2 x 2 mm) • Pb−Free Package is Available
描述与应用•领导沟道技术低的RDS（on） 延长电池寿命 •-1.8 V额定低电压栅极驱动 SC-70小尺寸表面贴装（2×2毫米） •无铅包装是可用
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