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PEMZ1 NPN+PNP Complex Bipolar Transistor 50V/-50V 100mA/-100mA HEF=120 SOT-563/SOT666 marking FZ switch and digital circuit application
| Collector-Base Voltage(VCBO) Q1/Q2 | 50V/-50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | 40V/-40V |
| Collector Current(IC) Q1/Q2 | 100mA/-100mA |
| Transtion Frequency(fT) | 100MHz |
| DC Current Gain(hFE) Q1/Q2 | 120/120 |
| Collector-Emitter Saturation Voltage Q1/Q2 | 200mV/-200mV |
| Power Dissipation Q1/Q2 | 300mW/0.3W |
| Description & Applications | Features • NPN/PNP general purpose transistors • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduced required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Complementary MOSFET driver for switch mode power supply • Complementary driver for audio amplifiers. |
| 描述与应用 | 特点 •NPN / PNP通用晶体管 •300 mW的总功耗 •非常小的1.6×1.2毫米的超薄封装 •自对准直引线在焊接过程中，由于 •替换两个SC-75/SC-89包装相同的PCB面积上的晶体管 •减少所需PCB面积 •减少取放成本。 应用 •通用开关和放大 •互补开关模式电源MOSFET驱动器 •互补驱动器，音频放大器。 |
