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PHD55N03LTA MOSFET N-Channel 25V 4A TO-252/D-PAK marking PHD55N03LTA avalanche energy/Fast switching

Model：PHD55N03LTA
Mark / screen / code / typing：PHD55N03LTA
Manufacturer：
Date Code：03+
Package：TO-252/D-PAK
Standard Package：2500
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	25V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current	4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs（th） Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation	65W
Description & Applications	TrenchMOS™ Logic Level FET N-channel logic level ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology. Low on-state resistance Fast switching.
描述与应用	TrenchMOS™逻辑电平FET N沟道逻辑电平场效应功率晶体管在一个塑料包装使用的TrenchMOS™技术。低通态电阻快速切换

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