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RN1503 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 70 300mW/0.3W SOT-153/SMV/SOT23-5 marking XC switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA
Q1基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio1
Q2基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)70
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) • Including two devices in SMV (super mini type with 5 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN2501~RN2506 APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •东芝晶体管的硅NPN外延型(PCT工艺)包括两个设备中的SMV(超迷你型5导线) •借助内置的偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •互补RN2501~~ RN2506 应用 •开关,逆变电路,接口电路和驱动器电路应用
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