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RN1705JE NPN+NPN Complex Bipolar Digital Transistor 50V 100mA HEF=80 R1=2.2KΩ R2=47KΩ 100mW/0.1W SOT-553/ESV marking XE switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V
集电极连续输出电流IC Collector Current(IC) 100mA
Q1基极输入电阻R1 Input Resistance(R1) 2.2KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio 0.047
Q2基极输入电阻R1 Input Resistance(R1) 2.2KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio 0.047
直流电流增益hFE DC Current Gain(hFE) 80
截止频率fT Transtion Frequency(fT) 250MHz
耗散功率Pc Power Dissipation 100mW/0.1W
Description & Applications Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • A wide range of resistor values is available for use in various circuit designs. • Complementary to RN2701JE~RN2706JE APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用 特点 •东芝晶体管的硅NPN外延式(PCT的进程)(偏置电阻内置晶体管) •两个设备都纳入一个极端超小型封装(5针)。 •将偏置电阻晶体管,减少了部件数量。减少部件数量,使制造比以往更紧凑的设备和降低装配成本。 •广泛的电阻值可用于在各种电路设计。 •互补到RN2701JE〜RN2706JE的 应用 •开关,逆变电路,接口电路和驱动器电路应用
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