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RTF010P02 MOSFET P-Channel -20V 1mA 0.28ohm SOT-323 marking WQ low on-resistance ultra high-speed switch low drive voltage

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V
最大漏极电流Id
Drain Current		-1A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.28Ω @-1A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.7--2.0V
耗散功率Pd
Power Dissipation		800mW/0.8W
Description & ApplicationsFeatures Low on-resistance. (570mΩ at 2.5V) High power package. High speed switching. Low voltage drive. (2.5V)
描述与应用低导通电阻。 （570mΩ在2.5V） 高功率封装。 高速开关。 低电压驱动
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