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SI1013X MOSFET P-Channel -20V -400mA 0.8ohm SOT-523 marking BAA/BGA low on-resistance power MOSFET 2000VESD protection

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
6V
最大漏极电流Id
Drain Current
-0.4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.8Ω @-350mA,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45V
耗散功率Pd
Power Dissipation
175mW/0.175W
Description & ApplicationsFEATURES • Halogen-free Option Available • High-Side Switching • Low On-Resistance: 1.2 Ω • Low Threshold: 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation • TrenchFET Power MOSFETs • 2000 V ESD Protection
描述与应用•无卤股权 •高边开关 •低导通电阻:1.2Ω •低阈值:0.8 V(典型值) •开关速度快:14纳秒 •1.8 V操作 •的TrenchFET 功率MOSFET •2000 V ESD保护
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