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SI1031X MOSFET P-Channel -20V -150mA 8ohm SOT-523 marking HCA low on-resistance power MOSFET 2000VESD protection

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
6V
最大漏极电流Id
Drain Current
-0.15A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
8Ω @-150mA,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.40--1.2V
耗散功率Pd
Power Dissipation
250mW/0.25W
Description & ApplicationsFEATURES • Halogen-free Option Available • High-Side Switching • Low On-Resistance: 8 Ω • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 45 ns • TrenchFET Power MOSFETs: 1.5-V Rated • ESD Protected: 2000 V
描述与应用 •无卤股权 •高边开关 •低导通电阻:8Ω •低阈值:0.9V(典型值) •开关速度快:45 ns的 •的TrenchFET 功率MOSFET:1.5 V额定 •ESD保护:2000 V
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