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SI1405DL MOSFET P-Channel -8V -1.6A 210mohm SOT-363 marking OBD

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-1.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
210mΩ@ VGS = -1.8V, ID = -0.8A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45
耗散功率Pd
Power Dissipation
568mW/0.568W
Description & ApplicationsP-Channel 1.8-V (G-S) MOSFET
描述与应用P沟道1.8-V(G-S)的MOSFET
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