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SI1499DH-T1-E3 MOSFET P-Channel -8V -1.6A 0.0622ohm SOT-363 marking BI power MOSFET ultra low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage
5V
最大漏极电流Id
Drain Current
-1.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.0622Ω @-2A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.35--0.8V
耗散功率Pd
Power Dissipation
2.78W
Description & ApplicationsFEATURES • TrenchFET Power MOSFET • Ultra-Low On-Resistance
描述与应用功率MOSFET •超低导通电阻
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