SI1902DL-T1-E3 Complex FET 20V 660mA/0.66A SOT-363/SC70-6 marking PAB|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI1902DL-T1-E3 Complex FET 20V 660mA/0.66A SOT-363/SC70-6 marking PAB

Model：SI1902DL-T1-E3
Mark / screen / code / typing：PAB
Manufacturer：
Date Code：06+ROHS
Package：SOT-363/SC70-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	20V
最大栅源极电压Vgs(±) Gate-Source Voltage	12V
最大漏极电流Id Drain Current	660mA/0.66A
源漏极导通电阻Rds Drain-Source On-State Resistance	630mΩ@ VGS =2.5V, ID =400mA
开启电压Vgs（th） Gate-Source Threshold Voltage	0.6~1.5V
耗散功率Pd Power Dissipation	270mW/0.27W
Description & Applications	Dual N-Channel 20-V (D-S) MOSFET FEATURES • Trench FET Power MOSFET
描述与应用	双N沟道20-V（D-S）的MOSFET 特点 •沟槽FET功率MOSFET

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