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SI1301DL-T1/LGW MOSFET P-Channel -20V -180mA 2.6ohm SOT-323 marking LGW

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-180mA/-0.18A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		2.6Ω @-180mA,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.40--1.5V
耗散功率Pd
Power Dissipation		150mW/0.15W
Description & ApplicationsP-Channel 20-V (D-S) MOSFET
描述与应用P沟道20-V（D-S）的MOSFET
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