SI3812DV complex FET MOSFET+schottky diode 20V 2A 500mA/0.5A 0.48V SOT-163/SOT23-6 marking 12|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI3812DV complex FET MOSFET+schottky diode 20V 2A 500mA/0.5A 0.48V SOT-163/SOT23-6 marking 12

Model：SI3812DV
Mark / screen / code / typing：12
Manufacturer：
Date Code：04+
Package：SOT-163/SOT23-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	N沟道 N-Channel
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	12V
源漏极导通电阻Rds Drain-Source On-State Resistance	2A
开启电压Vgs（th） Gate-Source Threshold Voltage	125mΩ@ VGS =4.5V, ID =2.4A
耗散功率Pd Power Dissipation	0.6V
Description & Applications	肖特基二极管SBD Schottky Barrier Diodes
描述与应用	20V

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