SI5903DC-T1-E3 Complex FET -20V -2.1A 1206-8/vs-8 marking DAFAA|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI5903DC-T1-E3 Complex FET -20V -2.1A 1206-8/vs-8 marking DAFAA

Model：SI5903DC-T1-E3
Mark / screen / code / typing：DAFAA
Manufacturer：
Date Code：0512NOPB
Package：1206-8/vs-8/SOT23-8
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	-12V
最大漏极电流Id Drain Current	-2.1A
源漏极导通电阻Rds Drain-Source On-State Resistance	260mΩ@ VGS = -2.5V, ID = -1.7A
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.6V
耗散功率Pd Power Dissipation	1.1W
Description & Applications	Dual P-Channel 2.5-V (G-S) MOSFET
描述与应用	双P沟道2.5-V（G-S）的MOSFET

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