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TBB1002BMTL 6V 30MA SOT363 MARKING BM Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
| 最大源漏极电压Vds Drain-Source Voltage |
6V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
|
| 最大漏极电流Id Drain Current |
30MA |
| 源漏极导通电阻Rds Drain-Source On-State Resistance |
|
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
|
| 耗散功率Pd Power Dissipation |
250MW/0.25W |
| Description & Applications | * Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier. * Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. * Suitable for World Standard Tuner RF amplifier. * Very useful for total tuner cost reduction. * Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. * Provide mini mold packages; CMPAK-6. |
| 描述与应用 | * 双内置偏置电路MOS FET的集成电路VHF/ UHF射频放大器。 * 小SMD封装CMPAK-6内置双BBFET;要降低零部件的成本与PC板空间。 * 适用于世界标准调谐器RF放大器。 * 总的调谐器成本降低非常有用的。 * 耐ESD;内置ESD吸收二极管。承受高达200 V C = 200 PF，RS=0条件。 * 提供小型模具包; CMPAK-6。 |
