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TPC8303 DOUBLE P-CHANNEL MOSFET -30V -4.5A SM8 代码 TPC8303 High forward transfer admittance
| Drain-Source Voltage (Vds) | -30V |
|
Vgs(±) Gate-Source Voltage |
±20 V |
| Drain Current （Id） | -4.5A |
|
Rds(on) Drain-Source On-State Resistance |
VGS = −4 V, ID = −2.2 A RDS=55~65mΩ
VGS = −10 V, ID = −2.2 A RDS=27~35mΩ
|
|
Vgs(th) Gate-Source Threshold Voltage |
−0.8~ −2.0 V |
| Power Dissipation (Pd) | 0.75w |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.)
High forward transfer admittance : |Yfs| = 7 S (typ.)
Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)
zEnhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)
|
| Technical Documentation Download | Read Online |
