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UNRL21500ASO NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 10k ML4-N1/SC-103/0402 marking H

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)160
截止频率fT Transtion Frequency(fT)150MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & Applicationssilicon NPN epitaxial planer type For digital circuit Features mold leadless type package allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
描述与应用模具无铅型包装允许精简的设备和自动插入细化通过胶带包装
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