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UPA1916TE MOSFET P-Channel -12V 4.5A 0.03ohm SOT-163 marking TL 4V drive low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-4.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.03Ω @-2.5A,-4V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45--1.5V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsFEATURES • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 57 mΩ MAX. (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 86 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)3 = 96 mΩ MAX. (VGS = –4.0 V, ID = –2.5A)
描述与应用•可驱动4 V的电源 •低通态电阻 的RDS(on)1 =57mΩ最大。 (VGS=-10V,ID=-2.5 A) 的RDS(on)2 =86mΩ最大。 (VGS= -4.5 V,ID=-2.5 A) 的RDS(on)=96mΩ最大。 (VGS= -4.0 V,ID=-2.5A)
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