UPA811T NPN+NPN Complex Bipolar Transistor 20V 35mA 8GHZ HEF=80~160 SOT-363/SC-88 marking 44R switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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UPA811T NPN+NPN Complex Bipolar Transistor 20V 35mA 8GHZ HEF=80~160 SOT-363/SC-88 marking 44R switch and digital circuit application

Model：UPA811T
Mark / screen / code / typing：44R
Manufacturer：
Date Code：05+
Package：SOT-363/SC-88
Standard Package：3000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	20v
V(BR) CEO Collector-Emitter Voltage	10v
Collector Current(IC)	35ma
Transtion Frequency(fT)	8GHZ
DC Current Gain(hFE)	80~160
VCE (sat) Collector-Emitter Saturation Voltage
Power Dissipation （Pd）	200mw/0.2w
Description & Applications	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR • Built-in 2 Transistors (2 × 2SC4228)
Technical Documentation Download	Read Online

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