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UPA836TF-T1-A NPN+NPN Complex Bipolar Transistor 9V 30mA/100mA 75~150/100~145 SOT-363/SC-88 marking V47 switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

  Q1/Q2=9V/9V

V(BR) CEO

Collector-Emitter Voltage

  Q1/Q2=6V/6V
Collector Current(IC)  Q1/Q2=30MA/100MA
Transtion Frequency(fT)  Q1/Q2=12GHZ/9GHZ
DC Current Gain(hFE)  Q1/Q2=75~150/100~145

VCE (sat)

Collector-Emitter Saturation Voltage

  Q1/Q2=
Power Dissipation （Pd）  200MW
Description & Applications  NPN SILICON EPITAXIAL TWIN TRANSISTOR
• LOW NOISE:
Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA
Q2:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA
• HIGH GAIN:
Q1: |S21E|
2 = 8.5 dB TYP at f = 2 GHz, VCE = 3 V,
lc = 10 mA
Q2: |S21E|
2 = 3.5 dB TYP at f = 2 GHz, VCE = 1 V,
lc = 3 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
(Q1: NE685, Q2: NE688)
Technical Documentation Download Read Online
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