Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
UPA836TF-T1-A NPN+NPN Complex Bipolar Transistor 9V 30mA/100mA 75~150/100~145 SOT-363/SC-88 marking V47 switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
Q1/Q2=9V/9V |
|
V(BR) CEO Collector-Emitter Voltage |
Q1/Q2=6V/6V |
| Collector Current(IC) | Q1/Q2=30MA/100MA |
| Transtion Frequency(fT) | Q1/Q2=12GHZ/9GHZ |
| DC Current Gain(hFE) | Q1/Q2=75~150/100~145 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
Q1/Q2= |
| Power Dissipation （Pd） | 200MW |
| Description & Applications | NPN SILICON EPITAXIAL TWIN TRANSISTOR
• LOW NOISE:
Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA
Q2:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA
• HIGH GAIN:
Q1: |S21E|
2 = 8.5 dB TYP at f = 2 GHz, VCE = 3 V,
lc = 10 mA
Q2: |S21E|
2 = 3.5 dB TYP at f = 2 GHz, VCE = 1 V,
lc = 3 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
(Q1: NE685, Q2: NE688)
|
| Technical Documentation Download | Read Online |
