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XN4609 NPN+PNP Complex Bipolar Transistor 25V/-60V 500mA/-100mA 200~800/160~460 SOT-163/SC-74 marking 5F switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 25V/-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/-100mA |
| 截止频率fT Transtion Frequency(fT) | 200MHz/80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~800/160~460 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 130mV/-300mV |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features • Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) • Two elements incorporated into one package. • Reduction of the mounting area and assembly cost by one half. Applications • For amplification of low frequency output (Tr1) • For general amplification (Tr2) 2SD1328+2SB709A |
| 描述与应用 | 特点 •NPN硅外延的刨床晶体管（TR1）硅PNP外延刨床晶体管的（TR2） •两个要素纳入一包装。 •减少安装面积和汇编一半的费用。 应用 •放大低频输出（TR1） •一般放大（TR2）2SD1328+2SB709A |
