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2SD1221-GR NPN Transistors(BJT) 60V 3A 3GHz 150~300 400mV/0.4V TO-252/DPAK/PW-Mold marking D1221 radio power amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流IC Collector Current(IC) | 3A |
| 截止频率fT Transtion Frequency(fT) | 3GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 150~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | Silicon NPN triple diffused type audio frequency power amplifier application features *low collector saturation voltage: Vce(sat)=0.4V *high power dissipation:Pc=20W |
| 描述与应用 | 硅NPN三重扩散类型 音频功放中的应用 特点 *低集电极饱和电压VCE（饱和）=0.4V *高功耗PC =20W |
