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UP04601G08SO NPN+PNP Complex Bipolar Transistor 60V/-60V 100mA/-100mA HEF=180~390 SOT-563 marking 5C switch and digital circuit application

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Product description
Collector-Base Voltage(VCBO) 60V/-60V
Collector-Emitter Voltage(VCEO) 50V/-50V
Collector Current(IC) 100mA/-100mA
 Transtion Frequency(fT) 150MHz/80MHz
 DC Current Gain(hFE) 180~390/180~390
Collector-Emitter Saturation Voltage 100mV/-300mV
 Power Dissipation 125mW
Description & Applications Features •Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) •Two elements incorporated into one package (Each transistor is separated) •Reduction of the mounting area and assembly cost by one half •For general amplification
描述与应用 特点 •NPN硅外延平面型(TR1)  PNP硅外延平面型(TR2) •两个要素纳入一个包(每个晶体管分离) •减少安装面积和装配成本的一半 •对于一般的放大

 

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