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2SC6026MFV-GR NPN Transistors(BJT) 60V 150mA/0.15A 60MHz 200~400 100mV/0.1V S0T-723/VESM marking HG general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
60MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsTransistor Silicon NPN Epitaxial Type General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400
描述与应用晶体管的硅NPN外延型 通用放大器应用 •高电压和高电流 VCEO=50 V,IC=150 mA(最大) •优秀的HFE线性:             HFE(IC= 0.1毫安)/ HFE(IC= 2毫安)= 0.95 •高HFE:HFE=120〜400
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