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FDC658P MOSFET P-Channel -30V -4A 0.041ohm SOT-163 marking 658

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.041Ω @-4A,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1--3V
耗散功率Pd
Power Dissipation		1.6W
Description & Applications• Rugged gate rating (±12V). • High performance trench technology for extremely low RDS(ON) • SuperSOT TM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
描述与应用•坚固的门评级（±12V）。 •高性能沟道技术极低的RDS（ON） •的SuperSOT TM-6包装：占地面积小（小72％ 比标准的SO-8）;低调（1mm厚）
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