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NTR0202PLT1 MOSFET P-Channel -20V -400mA 0.55ohm SOT-23 marking PL high efficiency low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-0.4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.55Ω @-200mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.1--2.83
耗散功率Pd
Power Dissipation
225mW/0.225W
Description & ApplicationsFeatures • Low RDS(on) Provides Higher Efficiency and Extends Battery Life RDSon = 0.80 , VGS = −10 V RDSon = 1.10 , VGS = −4.5 V • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available
描述与应用•低的RDS(on) 提供更高的效率和延长电池寿命 的RDSon,VGS=0.80= -10 V 导通电阻RDSon= 1.10,VGS=-4.5 V •微型SOT-23表面贴装封装节省电路板空间 •无铅包装是可用
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