NTZS3151PT1G MOSFET P-Channel -20V -860mA 240mohm SOT-563 marking TX load/power switch battery management low on-resistance small signal MOSFET|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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NTZS3151PT1G MOSFET P-Channel -20V -860mA 240mohm SOT-563 marking TX load/power switch battery management low on-resistance small signal MOSFET

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Product description

最大源漏极电压Vds Drain-Source Voltage	-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	-8V
最大漏极电流Id Drain Current	-860mA/-0.86A
源漏极导通电阻Rds Drain-Source On-State Resistance	240mΩ@ VGS = -1.8V, ID = -0.2A
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.45~1V
耗散功率Pd Power Dissipation	170mW/0.17W
Description & Applications	Small Signal MOSFET Features • Low RDS(on) Improving System Efficiency • Low Threshold Voltage • Small Footprint 1.6 x 1.6 mm • These are Pb−Free Devices Applications • Load/Power Switches • Battery Management • Cell Phones, Digital Cameras, PDAs, Pagers, etc.
描述与应用	小信号MOSFET 特点 •低的RDS（on）提高系统效率 •低阈值电压 •小尺寸1.6×1.6毫米 •这些都是无铅设备应用 •负载/功率开关 •电池管理手机，数码相机，掌上电脑，传呼机等。

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