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NTZS3151PT1G MOSFET P-Channel -20V -860mA 240mohm SOT-563 marking TX load/power switch battery management low on-resistance small signal MOSFET

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-860mA/-0.86A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
240mΩ@ VGS = -1.8V, ID = -0.2A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45~1V
耗散功率Pd
Power Dissipation
170mW/0.17W
Description & ApplicationsSmall Signal MOSFET Features • Low RDS(on) Improving System Efficiency • Low Threshold Voltage • Small Footprint 1.6 x 1.6 mm • These are Pb−Free Devices Applications • Load/Power Switches • Battery Management • Cell Phones, Digital Cameras, PDAs, Pagers, etc.
描述与应用小信号MOSFET 特点 •低的RDS(on) 提高系统效率 •低阈值电压 •小尺寸1.6×1.6毫米 •这些都是无铅设备 应用 •负载/功率开关 •电池管理 手机,数码相机,掌上电脑,传呼机等。
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