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PEMD12 NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA HEF=80 R1=R2=47KΩ 300mW/0.3W SOT-563/SOT666 marking d2 switching inverting interface driver circuit

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Product description
Collector-Base Voltage(VCBO) Q1/Q2 50V/-50V
Collector-Emitter Voltage(VCEO) Q1/Q2 50V/-50V
Collector Current(IC) Q1/Q2 100mA/-100mA
Q1 Input Resistance(R1) 47KΩ/Ohm
Q1 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q1(R1/R2) Q1 Resistance Ratio 1
Q2 Input Resistance(R1) 47KΩ/Ohm
Q2Base-Emitter Resistance(R2) 47KΩ/Ohm
Q2(R1/R2) Q2 Resistance Ratio 1
 DC Current Gain(hFE) Q1/Q2 80/80
Transtion Frequency(fT) Q1/Q2  
Power Dissipation Q1/Q2 300mW/0.3W
Description & Applications Features • PNP/PNP resistor-equipped transistors; • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral driver • Replacement of general purpose transistors in digital applications • Control of IC inputs.
描述与应用 特点 •PNP / PNP电阻配备晶体管; •内置偏置电阻 •简化电路设计 •减少元件数量 •减少取放成本。 应用 •低电流的外设驱动程序 •通用晶体管数字应用的更换 •控制IC投入。
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