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2SD780 NPN Transistors(BJT) Vcbo=60V Vceo=60v Ic= 300mA/0.3A ft=140MHz HFE=200~320 Vce=150mV/0.15VSOT-23/SC-59 marking DW4 radiopower amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
60V
集电极连续输出电流IC
Collector Current(IC)
300mA/0.3A
截止频率fT
Transtion Frequency(fT)
140MHz
直流电流增益hFE
DC Current Gain(hFE)
200~320
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications Audio Frenquency Power Amplifier NPN Silicon Transistor Mini Mold micro package; high DC current gain,hFE:200
描述与应用 音频功率放大器的频率为NPN型硅晶体管小型模具 微封装; 高直流增益,HFE:200
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