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RN2314 PNP Bipolar Digital Transistor (BRT) -50V -100mA/-0.1A 50 0.1W/100mW SOT-323/SC-70 marking YQ switch inverter interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)1KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.1
直流电流增益hFE DC Current Gain(hFE)50
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.1W/100mW
Description & ApplicationsFeatures • Transistor Silicon PNP Epitaxial Type (PCT Process) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN1314to1318 Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •PNP晶体管的硅外延型(PCT工艺) •内置偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •互补RN1314to1318的 应用 •开关,逆变电路,接口电路和驱动器电路应用
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