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RSS065N06FW6TB1 MOSFET N-Channel 60V 6.5A sop8 marking RSS065N06 no secondary breakdown/fast switch/high input impedance
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 6.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 48mΩ@ VGS =4V, ID =6.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1~2.5V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | 4V Drive Nch MOS FET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package . Applications Switching |
| 描述与应用 | 4V驱动N沟道MOS FET 特点 1）低导通电阻。 2）内置G-S的保护二极管。 3）小型表面贴装封装。 应用 开关 |
