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RTQ025P02 MOSFET P-Channel -20V 2.5A 0.072ohm SOT-163 marking TQ low on-resistance high-speed switch low voltage drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-2.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.072Ω @-2.5A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.7--2.0V
耗散功率Pd
Power Dissipation
1.25W
Description & ApplicationsFeatures Low on-resistance. (570mΩ at 2.5V) High power package. High speed switching. Low voltage drive. (2.5V)
描述与应用低导通电阻。 (570mΩ在2.5V) 高功率封装。 高速开关。 低电压驱动
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