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SSM6N16FE Complex FET 20V 100mA/0.1A SOT-563/ES6 marking DS high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 3Ω@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6~1.1V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ●High Speed Switching Applications ●Analog Switching Applications ●Suitable for high-density mounting due to compact package ●Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 ●高速开关应用 ●模拟开关应用 ●适用于高密度安装由于紧凑的封装 ●低导通电阻RON =3.0Ω（最大值）（@ VGS=4 V） RON =4.0Ω（最大值）（@ VGS= 2.5 V） ：RON=15Ω（最大）（@ VGS=1.5 V） |
