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2SB1462GQL PNP transistors(BJT) -60V -100mA/-0.1A 80MHz 160~260 -300mV/-0.3V SOT-523 marking AQ amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
160~260
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
125mW/0.125W
Description & ApplicationsPNP Silicon epitaxial planar transistor For general amplification Complementary to 2SD2216 Features 1)High foward current transfer ratio hFE. 2)Mini Power type package
描述与应用PNP硅外延平面晶体管 对于一般的放大 补充型2SD2216 特点 1)高FOWARD的电流传输比HFE。 2)小功率型封装
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