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SI1555DL-T1-GE3 Complex FET 20V/-8V 660mA/-570mA SOT-363/SC70-6 marking RB

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V/-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V/8V
最大漏极电流Id
Drain Current
660mA/-570mA
源漏极导通电阻Rds
Drain-Source On-State Resistance
630mΩ@ VGS =2.5V, ID =400mA/1.8Ω@ VGS =-2.5V, ID =-250mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.6~1.4V/-0.45~1V
耗散功率Pd
Power Dissipation
270mW/0.27W
Description & ApplicationsComplementary Low-Threshold MOSFET Pair
描述与应用低阈值MOSFET对互补
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