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2SC5628XZ-01TR NPN Transistors(BJT) 15V 50mA 9Ghz 50~160 SOT-623/MFPAK marking XZ high-frequency amplifier/oscillator

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
8V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
9Ghz
直流电流增益hFE
DC Current Gain(hFE)
50~160
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
80mW
Description & ApplicationsSilicon NPN Epitaxial High Frequency Amplifier / Oscillator Features • Super compact package; (1.4 × 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)
描述与应用NPN硅外延 高频放大器/振荡器 特点 •超级紧凑的封装; (1.4×0.8×0.59毫米) •高功率增益和低噪声系数; NF= 1.1 dB(PG=9分贝,在f =900兆赫,VCE  = 1 V)
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