BFS483 NPN+NPN Complex Bipolar Transistor 20V 65mAhef= 50~200 SOT-363 marking RH switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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BFS483 NPN+NPN Complex Bipolar Transistor 20V 65mAhef= 50~200 SOT-363 marking RH switch and digital circuit application

Model：BFS483
Mark / screen / code / typing：RH
Manufacturer：
Date Code：11+nopb 11+nopb
Package：SOT-363
Standard Package：3000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	20V
V(BR) CEO Collector-Emitter Voltage	20V
Collector Current(IC)	65MA
Transtion Frequency(fT)	8GHZ
DC Current Gain(hFE)	50~200
VCE (sat) Collector-Emitter Saturation Voltage
Power Dissipation （Pd）	0.45w
Description & Applications	NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier at collector currents from 2 mA to 28 mA fT = 8 GHz F = 1.2 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package
Technical Documentation Download	Read Online

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