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HN1A01FE-GR PNP+PNP Complex Bipolar Transistor -50V -150mA 120~400 SOT-563/ES6 marking D1G switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -150MA/-0.15A |
| Transtion Frequency(fT) | 80MHZ |
| DC Current Gain(hFE) | 120~400 |
|
VCE(sat) Collector-Emitter Saturation Voltage |
-0.3V |
| Power Dissipation (Pd) | 100MW/0.1W |
| Description & Applications | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Audio Frequency General Purpose Amplifier Applications
* Small package (Dual type)
* High voltage and high current
: VCEO = −50V, IC = −150mA (max)
* High hFE: hFE = 120~400
* Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
|
| Technical Documentation Download | Read Online |
