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SSM6N09FU Complex FET 30V 400mA/0.4A SOT-363/SC70-6/UF6 marking DJ high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
400mA/0.4A
源漏极导通电阻Rds
Drain-Source On-State Resistance
700mΩ@ VGS = 10V, ID = 200mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
1.1~1.8V
耗散功率Pd
Power Dissipation
300mW/0.3W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications • Small package • Low Drain-Source ON resistance. : Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V)
描述与应用东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 •小型封装 •低漏源导通电阻。 :RON =0.7Ω(最大值)(@ VGS= 10 V) RON=1.2Ω(最大)(@ VGS=4 V)
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