SI2314EDS MOSFET N-Channel 20V 4.9A SOT-23/SC-59 marking C4z6a low on-resistance。|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI2314EDS MOSFET N-Channel 20V 4.9A SOT-23/SC-59 marking C4z6a low on-resistance。

Model：SI2314EDS
Mark / screen / code / typing：c4Z6A
Manufacturer：
Date Code：09+ROHS
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	20V
最大栅源极电压Vgs(±) Gate-Source Voltage	12V
最大漏极电流Id Drain Current	4.9A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.033Ω/Ohm @5A,4.5V
开启电压Vgs（th） Gate-Source Threshold Voltage	0.45V
耗散功率Pd Power Dissipation	1.25W
Description & Applications	N-Channel 20-V (D-S) MOSFET TrenchFET Power MOSFET ESD Protected: 3000 V
描述与应用	N-Channel 20-V (D-S) MOSFET 功率MOSFET ESD保护：3000 V

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