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SI1905BDH-T1-E3 Complex FET -8V -630mA/-0.63A SOT-363/SC70-6 marking DJX load switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-630mA/-0.63A
源漏极导通电阻Rds
Drain-Source On-State Resistance
1.2Ω@ VGS = -1.8V, ID = -200mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45~-1V
耗散功率Pd
Power Dissipation
357mW/0.375W
Description & ApplicationsDual P-Channel 1.8-V (G-S) MOSFET FEATURES • Trench FET Power MOSFET APPLICATIONS • Load Switch for Portable Devices
描述与应用双P沟道1.8-V(G-S)的MOSFET 特点  •沟槽FET功率MOSFET 应用  •用于便携式设备的负载开关
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