SI1905BDH-T1-E3 Complex FET -8V -630mA/-0.63A SOT-363/SC70-6 marking DJX load switch|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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SI1905BDH-T1-E3 Complex FET -8V -630mA/-0.63A SOT-363/SC70-6 marking DJX load switch

Model：SI1905BDH-T1-E3
Mark / screen / code / typing：DJX
Manufacturer：
Date Code：10+ROHS 10NOPB
Package：SOT-363/SC70-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-8V
最大栅源极电压Vgs(±) Gate-Source Voltage	-8V
最大漏极电流Id Drain Current	-630mA/-0.63A
源漏极导通电阻Rds Drain-Source On-State Resistance	1.2Ω@ VGS = -1.8V, ID = -200mA
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.45~-1V
耗散功率Pd Power Dissipation	357mW/0.375W
Description & Applications	Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • Trench FET Power MOSFET APPLICATIONS • Load Switch for Portable Devices
描述与应用	双P沟道1.8-V（G-S）的MOSFET 特点 •沟槽FET功率MOSFET 应用 •用于便携式设备的负载开关

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