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2N5401S PNP transistors(BJT) -160V -600mA/- 0.6A 300MHz 60~240 -200mV/-0.2V SOT-23/SC-59 marking ZE low leakage current/high breakdown voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-160V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−150V
集电极连续输出电流IC
Collector Current(IC)
−600mA/- 0.6A
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
60~240 @ -5V,-0.01A
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−200mV/-0.2V
耗散功率Pc
PoWer Dissipation
350mW/0.35W
Description & Applicationsepitaxial planar PNP transistor • high voltage application • high collector breakdown voltage:VCBO=-160V,VCEO=-150V • Low leakage current::ICBO=-50nA(max),@VCB==-120V • Low saturation Voltage:VCE(sat)=-0.5V(max)@IC=-50mA,IB=-5mA • Low nosie:NF=8dB(max)
描述与应用外延平面PNP晶体管 •高电压应用 •高集电极击穿电压:VCBO=-160V VCEO=150V •低漏电流:ICBO=50nA的(最大),@ VCB==-120V •低饱和电压VCE(饱和)=-0.5V(最大值)@ IC=-50mA的,IB=-5mA 噪音低:NF=8分贝(最大)
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