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SSM6N29TU Complex FET 20V 800mA/0.8A SOT-363/SC70-6/UF6 marking KK1 high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
800mA/0.8A
源漏极导通电阻Rds
Drain-Source On-State Resistance
143mΩ@ VGS = 4.0V, ID = 600mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.4~1.0V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon N Channel MOS Type High-Speed Switching Applications • 1.8 V drive • N-ch 2-in-1 • Low ON-resistance: Ron = 235 mΩ (max) (@VGS = 1.8 V) Ron = 178 mΩ (max) (@VGS = 2.5 V) Ron = 143 mΩ (max) (@VGS = 4.0 V)
描述与应用东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 •1.8 V驱动器 •N沟道2合1 •低导通电阻:RON= 235MΩ(最大)(@ VGS= 1.8 V) RON=178MΩ(最大)(@ VGS=2.5 V) RON=143MΩ(最大)(@ VGS=4.0 V)
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