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SI2305ADS-T1-GE3 MOSFET P-Channel -8V -5.4A 0.032ohm SOT-23 marking 5AA

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-5.4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.032Ω @-4.1A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45V-0.8V
耗散功率Pd
Power Dissipation
1.7W
Description & ApplicationsFEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
描述与应用 Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
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