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SSM6J501NU MOSFET P-Channel -20V -10A 0.012ohm Vth:-0.3--1.0V UDFN6B marking SP1 power managementswitch 1.5V drive low on-resistance
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | -10A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.012Ω @-4A,-4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.3--1.0V |
耗散功率Pd Power Dissipation | 1W |
Description & Applications | Power Management Switch Applications • 1.5V drive • Low ON-resistance: RDS(ON)= 43.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 26.5 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 19.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 15.3 mΩ (max) (@VGS = -4.5 V) |
描述与应用 | 电源管理开关应用 •1.5V驱动 •低导通电阻RDS(ON)=43.0MΩ(最大)(@ VGS=-1.5 V) RDS(ON)=26.5MΩ(最大)(@ VGS=-1.8 V) RDS(ON)= 19.0MΩ(最大)(@ VGS=-2.5 V) RDS(ON)=15.3MΩ(最大)(@ VGS=-4.5 V) |