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RN1105MFV NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 2.2k 47k gain80 SOT-723/VESM marking XE switch inverting circuit interface circuit and driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.047
直流电流增益hFE DC Current Gain(hFE)80
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeatures Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2105MFV
描述与应用特性 开关,逆变电路,接口电路和驱动器电路应用 适合非常高密度安装超小型封装, 结合到晶体管偏置电阻器减少部件的数量,所以能够制造比更紧凑设备并降低装配成本。 宽范围的电阻值是可用于在各种电路。 对管是RN2105MFV
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