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SI7123DN-T1-GE3 MOSFET P-Channel -20V -16A 0.0086ohm Vth:-0.4V-1.0V 1212-8 marking 7123 power MOSFET ultra low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -16A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.0086Ω @-5.2A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4V-1.0V |
| 耗散功率Pd Power Dissipation | 3.8W |
| Description & Applications | FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated • Ultra-Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC |
| 描述与应用 | •根据IEC 61249-2-21的无卤素 定义 •的TrenchFET 功率MOSFET：1.5 V额定 •超低导通电阻 •100％的Rg 测试 •符合RoHS指令2002/95/EC |
