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TPCF8105 P-Channel MOS (U-MOSVI) -20V -6A SOT23-8 MARKING F3E Lithium-Ion Secondary Batteries ? Power Management Switches
| 最大源漏极电压Vds Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
12V |
| 最大漏极电流Id Drain Current |
-6A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance |
0.024Ω @-3A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
-0.5--1.2V |
| 耗散功率Pd Power Dissipation |
2.5W |
| Description & Applications | Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON)= 24 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) |
| 描述与应用 | 由于占地面积小，小而薄的封装 低漏源电阻RDS（ON）= 24m（典型值）（VGS=-4.5 V） 低漏电流：IDSS= -10μA（最大）（VDS=-20 V） 增强模式：VTH =-0.5〜-1.2 V（VDS=-10 V，ID=-0.5毫安） |
