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BC846B NPN Transistors(BJT) Vcbo=80V Vceo=65v Ic=100mA/0.1A ft=100MHz HFE=200~450 Vce=200~600 mV SOT-23/SC-59 marking 1B generalswitch and amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
65V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
200~450
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200~600 mV
耗散功率Pc
Power Dissipation
310mW/0.31W
Description & Applications NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended.
描述与应用 NPN硅外延平面晶体管开关和AF放大器应用。 特别适用于自动插入厚薄膜电路。 这些晶体管被分为三组,A,B和C根据其电流增益。 BC846是不同的,在组A和B,然而,类型BC847和BC848可以提供在所有三个组。 BC849是一款低噪声型可在B和C组作为互补类型,PNP晶体管BC856... BC859建议。
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